Prof. Schulze studied experimental physics at the TU of Braunschweig, Germany. In 2000 he received the Ph.D. degree (Dr.-Ing.) in Electrical Engineering from the Electrical Engineering & Information Technology Faculty of the University of the German Federal Armed Forces Munich with a dissertation on Boron surface phases and Esaki-like tunneling transistors. From the same faculty he received in 2004 his post-doctoral degree (Habilitation) in Semiconductor Physics and Microelectronics. He was active as Senior Consultant for Technical Risk Management and as Head of Competence Field “Robust Design Optimization” in Siemens Corporate Technology (2005-2008). Since 2008 he is working at the University of Stuttgart, Germany, as Professor of Electrical Engineering and Head of the Institute of Semiconductor Engineering.