IMPORTANT: The provided information is accurate as of AY2223 intake and is subject to change.
Successful completion of this program will equip students with the capabilities in the following technical areas: 1) Conventional semiconductor manufacturing technology which includes the materials, devices and manufacturing process.; 2) Carbon and organic electronics, photovoltaic, sensor and display technology which include the corresponding materials, devices and manufacturing process; and 3) Green technology for energy harvesting, wireless sensor networks and cyber systems.
The teaching faculty in the programme are predominately from TUM and NTU, as well as additional modules taught by industry leaders and other expert academics.
COURSE COMMENCEMENT
Single yearly intake, with course commencement in August every year.
COURSEWORK & STUDENT-TEACHER RATIO
All coursework are conducted in English and students will be taught by German and Singaporean lecturers. Student-teacher ratio averages between 20:1 to 35:1. Only live teaching is conducted in all TUM Asia classes. All examinations will be written by the student him/herself, and examination results are released approximately 1-3 months after the examination.
COURSE DURATION
The Master of Science in Green Electronics degree is a 2-year full-time programme. Students must complete their coursework, 3-month internship and 6-month of Master Thesis writing to qualify for graduation.
COURSE COMPLETION
In order for a student to graduate, he/she must obtain a minimum overall CAP score of 4,0 or below and CGPA score of 2.50 or above. An academic warning will be issued to students if their CGPA score falls below 2.50. There is also a risk of candidature termination for failure in any modules if overall CGPA score falls below 2.50. A student will successfully complete his/her degree course in the n+2 year, n being the year of enrolment and assuming the circumstances that the student will not have any failed modules that he/she is required to retake. For example, if a student is enrolled in August 2017, he/she is likely to complete the course by August 2019, subject to the fulfilment of the graduation criteria.
Laboratory Core Modules
Each module carries 3 AUs (academic units) and 6 ECTS-credits
NM6604 Laboratory 1: Semiconductor Process and Device Simulation (NTU)
Process models: diffusion, oxidation, implantation. Process variables/targets: doping profiles, junction depths, oxide thickness. Process simulation: Simulate a given sub-micron CMOS process recipe and study profiles and layer structures. Physical models. Numerical algorithms and solutions. Device performance parameters. Short-channel effects. DC simulations. Device simulation: Simulate the DC characteristics of the “fabricated” device and analyze device operation with respect to potential, field, and carrier distributions as well as terminal I–V characteristics. Wafer-split experiment. Device-target vs. process-variable relations. Transistor performance optimization/trade-offs through process variation. Technology development and optimization. Design of Experiment (DOE): Implement a computer experiment to study the scaling characteristics (varying gate length) of the given sub-micron technology. Study the influence of process variations on device performance parameters.
Lecturers: Assoc. Prof. Daniel Poenar / Assoc. Prof. Zhou Xing / Hours: 45 / Semester: 1
NM6605 Laboratory 2: Design and Modelling of Nanodevices (NTU)
Part I includes MOSFET analytical equations, short-channel effects, compact model for circuit simulation, parameter extraction, and transistor optimization. Part II includes semiconductor fundamental, simulation of Si, Ge, and Sn band structures, Quantum well (QW), Energy subbands and wave functions, kp method. It also covers QW band structure calculation by using single band and 6-band kp method, density of state, doping concentration, and Fermi energy level calculations by using single band and 6-band kp method. Intersubband (intraband) transition, squared transition element calculation, absorption spectrum, and cut-off wavelength of QW infrared photodetector is also discussed. The influence of Ge composition and well width on peak wavelength of photodetectors and optical gain simulation of Ge QW on Si is also covered.
Lecturers: Assoc. Prof. Fan Weijun / Assoc. Prof. Zhou Xing / Hours: 45 / Semester: 1
Core Elective Modules*
Each module carries 3 AUs (academic units) and 5 ECTS-credits
NM6601 Microfabrication Technology (NTU)
Photolithography technology. Photoresist technology. Advanced lithography. Metrology defect inspection and analytical technique. Cleaning technology. Wet etching process and technology. Dry etching process and technology. Chemical mechanical polishing. Epitaxy. Plasma enhanced chemical vapor deposition. Atomic layer deposition. Physical vapor deposition.
Lecturers: Assoc. Prof. Tay Beng Kang / Assoc. Prof. Terence Wong / Hours: 45 / Semester: 1
NM6607 Optomechatronic Measurement Systems (TUM)
This course will focus on optical principles and their application in green electronics production processes, photovoltaic devices, thin film measurement, display technology, distributed sensor networks, energy harvesting. In particular, the course will address the following topics (inter alia):
i) fundamentals of optomechatronic measurement systems
ii) light sources and detectors
iii) refraction, interference and diffraction
iv) electronic speckle pattern interferometry
v) thin film reflectometry as an in-situ deposition sensing technique
vi) ellipsometry for thin layer analysis
vii) optical waveguide sensors and their application in renewable energy devices such as wind turbines
viii) Fourier transform infrared spectroscopy for detection of greenhouse gases
Applications of optomechatronic measurement technology in Green Electronics industry, including fundamental understanding of patent protection and patent strategy for optomechatronic measurement devices.
Lecturers: Prof Dr.-Ing Alexander Koch / Hours: 45 / Semester: 1
NM6618 Materials for Electronic Devices (NTU)
Bonding between atoms. Electronic and atomic structures. Basic crystal structures. Energy band. Semiconductors, insulators and organic materials. Defects and doping. Surface and interface. Functional properties of materials. Compound semiconductors. Nanostructures. Electronic ceramics.
Lecturers: Assoc. Prof. Wang Hong / Assoc. Prof. Tang Xiaohong / Hours: 45 / Semester: 1
NM6619 Bioelectronics (TUM)
1) Introduction to bionanotechnology 2) Materials: electrolytes, organic molecules, lipid bilayers, DNA, proteins 3) Nanofabrication techniques and self-assembly 4) Biofunctionalization of solid surfaces 5) Surface analytics and characterization 6) Electrical biosensors: solid-liquid interface, surface plasmon resonance, quartz microbalance, electrochemical impedance, nanopores, nanowires 7) Charge transfer in biomolecules: fundamentals and applications
Lecturers: Prof. Dr. Marc Tornow / Hours: 45 / Semester: 2
NM6620 Nanotechnology for Energy Systems (TUM)
Approaches to nanotechnology: bottom-up vs. top-down. Characterization and fabrication issues in the nanoscale. Applications of nanotechnology in electronics, optoelectronics, telecommunications, medicine, biology, mechanics and robotics. Overview of nanotechnology programs in USA, Japan and Europe. Nanomaterials and Nano-systems for energy applications. Examples of nanotechnology energy production, energy storage, energy harvesting, and high voltage technologies. A look into the future: electro and photocatalysis, hydrogen production and storage. Economical implications of nanotechnology in the energy field.
Lecturers: Prof. Dr. Alessio Gagliardi / Hours: 45 / Semester: 1
NM6621 Microstructured Devices and Systems for Green Electronics (TUM)
The course will focus on the operational principles and underlying physical effects of microstructured electronic and mechatronic devices and microsystems and their application fields. In particular, the course will address the following topics:
i) Basic physical effects in solid-state microstructured electronic and micromechatronical devices and their application fields (microelectronics, microsensors, microactuators, and microsystems).
ii) Characteristic material properties of semiconductors: Intrinsic and extrinsic electrical conductivity, mobility, charge carrier transport by drift and diffusion, carrier generation- recombination, thermal conductivity, energy domain coupling effects (thermoelectricity, piezoresistance, piezoelectricity, thermoelasticity, galvanomagnetism etc.).
iii) Basic operational principles of microdevices: pn junction, MOS field effect, unipolar and bipolar electronic devices, power devices, various transducer effects.
iv) Phenomenological transport theory: Onsager´s transport model, continuous field models of energy- coupled multi-domain systems, physics-based macro-modeling of microsystems.
v) Selected sensor and actuator application examples.
Lecturers: Prof. Dr. Gerhard Wachutka / Hours: 45 / Semester: 2
NM6625 Introduction to Power Systems (TUM)
i) Structure of the power system: generation, transportation and distribution and electricity consumption.
ii) Introduction to typical power plant types including new renewable technologies. Description of the transport, distribution and control philosophy.
iii) Introduction to the electricity demand, especially due to new electronic services. Fundamental terms of energy economy and electricity markets.
iv) Introduction into smart grids.
Lecturers: Prof. Dr. Thomas Hamacher / Hours: 45 / Semester: 2
Elective Modules*
Each module carries 3 AUs (academic units) and 5 ECTS-credits
NM6603 Modern Semiconductor Devices (NTU)
Bipolar transistor operation principles. Bipolar device modeling. State-of-the-art bipolar structures. CMOS device scaling effects. Semiconductor memories. Future trends and challenges
Lecturers: Assoc. Prof. Tang Dingyuan / Prof. Zhang Dao Hua / Hours: 45 / Semester: 2
NM6617 Advanced MOSFET & Novel Devices (TUM)
Historical development of mainstream MOSFETs until today; economical, technological and physical fundamentals; properties of long channel and short channel MOSFETs, hot carrier effects; short channel effects, scaling rules; basics of charge carrier transport (quantum mechanical, hydro dynamics, ballistics); proposed new MOSFET structures (strain engineering, metal-gate, high-k, vertical MOSFETs, double gate MOSFETs); hot electron transistors; tunneling transistors; low dimensional devices; single electron transistor, single electron memories, quantum electronics.
Lecturers: Dr.-Ing. Josef Biba / Hours: 45 / Semester: 2
NM6623 Nanophotovoltaics
Third generation photovoltaics; Quantum dot tandem cells; Hot carrier cells; Multiple electron hole pair generation; Impurity and intermediate band devices.
Lecturers: Assoc Prof. Tang Xiaohong / Hours: 45/ Semester: 2
NM6624 Green Nanotechnology (NTU)
Energy flow in environment; Optical properties of nanomaterials; Spectral selective windows; Solar thermal collectors; Solar cells; Cooling and energy harvesting; Electrochemical energy storage.
Lecturers: Assoc. Prof. Terence Wong / Hours: 45 / Semester: 2
NM6626 Polymer Electronics
Fundamentals of electronic and optoelectronic devices and technologies based on polymer semiconductors; An overview of Polymer Electronics; Electronic structure and band theory; Beyond polyacetylene; Optoelectronic properties; Charge tranport; Synthesis and macromolecular design; The physics of polymers; Surfaces and interfaces; Polymer transistors; Optoelectronic devices; Photovoltaic devices (organic and dye sensitized solar cells) and Polymeric memories.
Lecturers: Prof. Koch Alexander / Hours: 45/ Semester: 2
NM6627 Semiconductor Power Devices (TUM)
The course will focus on the function and operational principles of today´s semiconductor power devices and their use in specific applications. In particular, the course will address the following topics:
i) Fundamentals of semiconductor device physics: electronic band structure, intrinsic and extrinsic conductivity, mobility, carrier transport by drift and diffusion, carrier generation and recombination, impact ionization, pn-junction, MOS field effect.
ii) Power device structures:
– PIN diode
– Schottky diode
– Bipolar junction transistor
– Thyristor
– Power MOSFET
– Insulated gate bipolar transistor (IGBT)
iii) Robustness and destruction mechanisms of power devices:
– Thermal breakdown
– Electrical breakdown
– Dynamic avalanche
– Latch-up in IGBTs
– Cosmic ray induced failure
Lecturers: Prof. Dr. Gerhard Wachutka / Hours: 45 / Semester: 2
Non-Technical Elective Modules* (Select 2 out of 6)
Each module carries 5 ECTS-credits
Business Administration
The module covers the following topics: the Organizational forms of enterprises – financing instruments (equity financing, internal and external financing) – methods of capital budgeting (cost analysis, net present value analysis, internal rate of return analysis) – corporate valuation procedures (discounted cash flow analysis, multiple valuation) – methods and requirements of internal and external accounting (national and international accounting standards, origin and allocation of costs) – human resource management (forms of organizing, history of organizational research, human resource theories, motivational theories).
Lecturers: Prof. Dr. Christoph Kaserer/ Prof. Dr. Isabel Welpe/ Hours: 45 / Semester: 1
Industrial Marketing
The module covers the following topics:
– Principles of marketing
– Marketing strategy and environment
– Creating customer value, satisfaction, and loyalty
– Information management and market research
– Analysing consumer and business markets
– Competition and differentiation from competitors
– Segmenting, targeting, and positioning
– Creating and managing products and services, brand management
– Pricing
– Marketing communications, marketing channels, and service P’s.
Students will work out, in teams, business cases, make their own business decisions and develop marketing concepts based on provided information of a real case study.
Lecturers: Prof. Dr. Christian Braun/ Hours: 45 / Semester: 2
Innovation and Technology Management
The module covers the following topics:
1. Innovation vs. invention
2. Creating value through innovation
3. Four forces of innovation
4. Value to the customer and Hi-Tech Marketing
5. Business system innovation and Service innovations
6. Technological discontinuities, S-Curves and Scenario techniques
7. Managing uncertainty and agility of enterprises
8. Innovation, productivity and restructuring
9. Venture capital, Start-ups and financing of innovation
10. Innovation-driven economic cycles and Innovation impact on growth and jobs
The lecture presents the dynamics of technological development through innovation and the related management issues, the difference between creating a new product (invention) and improving an existing product/idea (innovation), Start-ups and financing of innovation, Innovation-driven economic cycles and Innovation impact on growth and jobs. This course is useful for students who plan to take up careers in manufacturing and service companies or in R&D organizations that make significant use of research and technology to build their portfolio.
Lecturers: Prof. Dr. Edward Krubasik/ Hours: 45 / Semester: 1
International Intellectual Property Law
This module will give a brief introduction to intellectual property rights and focus on insights into general principles of patent law and international conventions governing the patent law. Current developments and criticism of the current patent law system will also be addressed. In addition, practical (legal) aspects of the commercialization of patents will be dealt with.
Lecturers: Dr. Marian Majer/Attorney Bayani Loste/ Hours: 45 / Semester: 2
Modern Developments in Industry
The module will provide insights into the core elements of Industry 4.0 such as: introduction to Cyber-Physical System, Radio Frequency Identification (RFID) technologies, information collection with intelligent sensors, industrial networking to connect the machines and processes together, Manufacturing Execution System (MES) for order management, production control and value adding to the complete supply chain management.
Lecturers: TBA / Hours: 45 / Semester: TBA
Production Planing in Industry
Manufacturers are confronted with special requirements of their production processes. Cycles, by-products, batches and campaigns are difficult to handle by nowadays ERP software packages (ERP = Enterprise Resource Planning). Concepts of material requirements planning, supply chain management (SCM) combined with basics in cost accounting will be explained. As a highlight a simulation model, based on modern simulation software, will be used by students to simulate production planning and achieve the ‘best’ production plan.
The module covers the following topics:
Part A: Overview
Part B: Industries – Chemical, Plastics and PVC
Part C: The World of PVC
Part D: Production Planning – Introduction
Part E: Production Planning Process
Part F: Procurement Process
Part G: SAP & Enterprise Resource Planning
Part H: Simulation Theory and Simulation Models
Lecturers: Dr. Hanns Zeltinger/ Hours: 45 / Semester: 2
Internship
ECTS Credits: 18
Master Thesis
ECTS Credits: 30
*Disclaimer: Modules available for selection are subject to availability. Unforeseen circumstances that affect the availability of the module include an insufficient number of students taking up the module and/or the unavailability of the professor. TUM Asia reserves the right to cancel or postpone the module under such circumstances.