BIOGRAPHY

D. H. Zhang received M.S degree from Shandong University, China, and Ph.D. degree from the University of New South Wales, Australia. He joined the School of Electrical and Electronic Engineering, Nanyang Technological University as a lecturer in 1991 and was promoted to Senior Lecturer in 1995 and Associate Professor in 1999. Before this, he worked as a Postdoctoral Research Associate in School of Physics, the University of New South Wales. He has authored and co-authored over 110 journal papers, presented over 120 conference papers and filed three patents. He is a senior member of IEEE since 1997 and a Fellow of Institute of Physics since 2006. He is the Editor and guest editor of a few international journals. He is also the reviewer for a number of international journals, such as Applied Physics Letters, Journal of Applied Physics, IEEE Journal of Quantum Electrons, J. Crystal Growth, and Thin Solid Films.

RESEARCH INTERESTS

• Semiconductor materials, devices and physics
• Quantum well, wire and dot structures and devices
• New nano-scaled materials and devices for low and high temperature infrared photodetection
• Metamaterials.

SELECTED PUBLICATIONS

1. W. Liu, D. H. Zhang, W. J. Fan, X. Y. Hou and Z.M. Jiang. (2008). Intersubband transitions in InGaAsN/GaAs quantum wells. Journal of Applied Physics, .

2. W. Liu, D. H. Zhang, T-H. Loh, W. J. Fan, S. F. Yoon, N. Balasubramanian. (2007). Study of intersubband transitions in SiGe/Si quantum wells by 14-band k.p model. International Journal of Materials Science and Simulation, 1, 21-32.

3. D. H. Zhang, W. Liu, L. Sun, W.J. Fan, S.F. Yoon, S.Z. Wang and H. C.Liu. (2006). Transverse electric dominant Intersubband absorption in Si-doped GaInAsN/GaAs QWs. Journal of Applied Physics, 99, 043514.