Prof. Zhang Dao Hua

Professor

PhD

Email: edhzhang@ntu.edu.sg

BIOGRAPHY

Prof. ZHANG Dao Hua joined the School of Electrical and Electronic Engineering, Nanyang Technological University as a lecturer in 1991 and is currently a full professor. He is the Deputy Director, Centre of Excellence for Semiconductor Lighting and Displays (LUMINOUS) and Director of Metamaterials program. He has worked on semiconductor materials and devices for many years and is one of the leaders in the field of photodetection from infrared to millimetre waves. He successfully completed over 30 research projects, including the first 10 million-dollar CRP in NTU as Lead Principal Investigator, which was assessed as “outstanding word class research progress” by international evaluation panel including a Nobel laureate. He has published over 560 journal and conference papers, 7 book and proceedings, and 3 book chapters. He also filed 10 patents and technology disclosures.

Prof. Zhang received Singapore President National Day Medal and is the nominee of Singapore President Technology Award. He is associate editor, member of editorial board and guest editor for over 10 international journals, including eLight, Crystals, and IEEE Transaction on Nanotechnology. He is in International Advisory and program committee of about 10 international conferences and has also chaired and co-chaired over 12 international conferences. He is the Fellow of Institution of Engineering and Technology (FIET) and Institute of Physics (FInstP). He is also the Fellow of Academy of Engineering Singapore (FSAEng).

RESEARCH INTERESTS

  • Semiconductor materials, devices and physics
  • Quantum well, wire and dot structures and devices
  • New nano-scaled materials and devices for low and high temperature infrared photodetection
  • Metamaterials and Naophotonics

CURRENT GRANTS

  • Uncooled Two-dimensional Focal Plane Array Mid-wave Infrared Imaging System

KEY PUBLICATIONS

  1. W. Liu, D. H. Zhang, W. J. Fan, X. Y. Hou and Z.M. Jiang. (2008). Intersubband transitions in InGaAsN/GaAs quantum wells. Journal of Applied Physics, .
  2. W. Liu, D. H. Zhang, T-H. Loh, W. J. Fan, S. F. Yoon, N. Balasubramanian. (2007). Study of intersubband transitions in SiGe/Si quantum wells by 14-band k.p model. International Journal of Materials Science and Simulation, 1, 21-32.
  3. D. H. Zhang, W. Liu, L. Sun, W.J. Fan, S.F. Yoon, S.Z. Wang and H. C.Liu. (2006). Transverse electric dominant Intersubband absorption in Si-doped GaInAsN/GaAs QWs. Journal of Applied Physics, 99, 043514.
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