BIOGRAPHY

Dr. Fan Weijun received the B. Eng degree in applied physics from National University of Defense Technology, Changsha, China, in 1987, the M. S. degree from the Institute of Semiconductors, Chinese Academy of Science, Beijing, China, in 1990, and the Ph. D. degree in electrical engineering from National University of Singapore, in 1997. From 1990 to 1994, he joined the Institute of Semiconductors, Chinese Academy of Science as a Research Assistant. From 1996 to 1999, he joined MBE Technology Pte. Ltd., Singapore as a System Engineer. From 1999 to 2000, he was a Process Engineer at Agilent Technologies, Singapore. From 2000 to 2005, he was an Assistant Professor in Nanyang Technological University. From 2005 to now, he is an Associate Professor in Nanyang Technological University.

His research interests include semiconductor band structure calculations; semiconductor material growth, characterizations and photonic device fabrications; Si photonics; Spintronics. He authored/co-authored > 170 refereed journal papers and >100 conference presentations including 10 plenary/invited talks . According to SCI (Web of Science), the total external citations > 3100 times, his h index is 23. He co-authored two book chapters. The granted research funding > S$6 M from NRF, MOE, ASTAR, DARPA(USA) and NSG(Japan) as PI/Co-PI. He graduated > 10 PhD students as Main/Co-supervisor.

He was the scientific committee member, reviewer and optoelectronics session co-chair of Symposium J of ICMAT 2005. He was the Technical Programme Committee Member of Integrated Optoelectronic Devices and Optical Processors of the 43rd European Conference on Optical Communication (ECOC) 2017, Sweden. He served as Chair of Symposium B of the 9th International Conference on Materials for Advanced Technologies, Singapore 2017, and Co-Chair of CLEO-PR, OECC and PGC 2017: Symposium J1 Semiconductor and Integrated Optical Devices. He served as Guest Editor of IEEE JOURNAL OF QUANTUM ELECTRONICS in 2019.

RESEARCH INTERESTS

His research interests include semiconductor band structure calculations by using effective mass theory, the first-principles method and empirical pseudopotential method (EPM); Compound semiconductor material growth, characterizations and device fabrications; Si photonics; Spintronics.

RESEARCH PROJECTS

• Theory of Direct-transition Optical Gain In A Novel n+ Doping Tensile-strained Ge/GeSiSn-on-Si Quantum Well Laser: Many Body Effect

CURRENT GRANTS

• Beyond-lead lamellar perovskite-based nano-scintillators
• CMOS-Compatible Resonant-Cavity-Enhanced GeSn Single-Photon Avalanche Photodiode – Material, Design and Device
• Quantum Topological Devices And 3D Nanophotonic Integration
• Resonant Tunneling through 2D and Quasi-2D Interface: Physics and Multi-functional Quantum Tunneling Technology
• User-Friendly Semiconductor Physics and Device Simulation Platform

KEY PUBLICATIONS

1. B. S. Ma, W. J. Fan, Y. X. Dang, W. K. Cheah, and S. F. Yoon. (2007). Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector. Applied Physics Letters, 91, 041905-1-3.
2. S. T. Ng, W. J. Fan, Y. X. Dang, and S. F. Yoon. (2005). Comparison of electronic band structure and optical transparency conditions of InxGa1-xAs1-yNy/GaAs quantum well calculated by 10-band, 8-band, and 6-band k.p models. Physical Review B, B72, 115341.
3. W. J. Fan, S. F. Yoon, T. K. Ng, S. Z. Wang, and W. K. Loke. (2002). Comparison of nitrogen compositions in the as-grown GaNAs on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy. Applied Physics Letters, 80(22), 4136-4138.
4. W. J. Fan, M. F. Li, T. C. Chong, and J. B. Xia. (1996). Electronic properties of zinc-blende GaN, AlN and their alloy Ga1-xAlx N. Journal of Applied Physics, 79, 188-194.
5. Jian-Bai Xia and Wei-Jun Fan. (1989). Electronic structures of superlattices under in-plane magnetic field.Physical Review B, 40, 8508-8515.