Biography

Dr. Wang Hong is currently an Associate Professor is School of Electrical and Electronic Engineering, Nanyang Technological University. He is also the Director of Nanyang NanoFabrication Centre and Deputy Director of Silicon Technologies – Centre of Excellence.

Dr. Wang received the B.Eng. degree from Zhejiang University, Hangzhou, Zhejiang, China, in 1988, and the M.Eng. and Ph.D. degrees from the Nanyang Technological University (NTU), Singapore, in 1998 and 2001, respectively. Before he joints NTU in 1996, he was with the Institute of Semiconductors, Chinese Academy of Sciences from 1988 to 1994, where he developed InP-based opto-electronic integrated circuits (OEICs). From 1994 to 1995, he was a Royal Research Fellow with British Telecommunications Laboratories, Ipswich, U.K., where he was involved with the development of InP-based heterostructure field-effect transistors (HFETs) using E-beam lithography.

In 2000, Dr. Wang demonstrated the world first InP-based metamorphic heterojunction bipolar transistor (MHBT). Dr. Wang was a recipient of the Royal Research Fellowship, U.K. (1994-1995) and corecipient of the 2007 Defence Technology Prize, MINDEF, Singapore for his outstanding contributions to the development of MMICs. He served as a Deputy General Chair of IEEE International Nanoelectronics Conference (INEC) 2013, session chair, and committee member for 2009 and 2010 IEEE International Electron Devices Meeting (IEDM), and Vice-chairman for the Active Microwave/Millimeterwave Components and Devices Subcommittee, Asia and Pacific Microwave Conference 2008. He has authored or coauthored over 180 technical papers and 2 book chapters. His current research interests include III-V devices and technology, micro- and nano-fabrication, RF Si MOS devices and technologies, and RF MEMS.

Research Interests

Prof. Wang’s areas of expertise are semiconductor devices and IC technologies. His current research works focus on compound semiconductor and Si-based device physics, fabrication technology, and characterization.

Research Projects

• Development of Reconfigurable Microwave Circuits
• Fabrication of Microcoaxial Lines
• GaN-Based Devices and ICs On Silicon for mm-wave Applications
• INP-Based Transistors For InP-on-si Optoelectronic Circuits
• Micro-fabricated Filters
• Microcoax2 with Associate Professor Wang Hong
• Nanowire-Based Image Sensors
• Next Generation High Performance Uncooled Infrared Image Sensor Technology
• Next Generation High Performance Uncooled Infrared Image Sensors Based on AlGaAs/InGaAs Heterostructure Thermopiles Technology
• Project AOSTANO
• RF MEMS Switch And Circuit Applications
• Silicon Waveguide-Integrated InP/InGaAs Photonic Components and Si-compatible Process Integration
• Sub Project 1 – Fabrication of High Saturation Current, High Speed Photodetectors
• Sub Project 5- Development of monolithiclly integrated semi-conductor mode-locked lasers (MLLs) for photonic analog to digital converter (ADC) application

Selected Publications

1. S. Arulkumaran, G.I. Ng, S. Vicknesh, H. Wang, K. S. Ang, C. M. Kumar, K. L. Teo, and K. Ranjan. (2013). Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack. Applied Physics Express, 6, 016501.

2. H. Wang. (2013). Chapter 7: Metamorphic Heterojunctuin Bipolar TransistorsLattice Engineering: Technologies and Application. (pp. 20)..

3. M. Abe, K. S. Ang, H. Wang, and G. I. Ng. (2013). Modulation-Doped AlGaAs/InGaAs Thermopiles (H-PILEs) for Uncooled IR-FPA Utilizing Integrated HEMT-MEMS TechnologyThe Wonder of Nanotechnology..

4. H. Su, H. Wang, H. Liao, and H. Hu. (2012). Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress. IEEE Transactions on Electron Devices, 59(11), pp.3078-3083.

5. S. Arulkumaran, G. I. Ng, S. Vicknesh, H. Wang, K. S. Ang, J. P. Y. Tan, V. K. Lin, S. Todd, G.-Q. Lo, and S. Tripathy. (2012). Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate. Japanese Journal of Applied Physics, 51, 11001-4.